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參數(shù)資料
| 型號(hào)： | MMBT5550 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | High Voltage FET-Input Operational Amplifier 8-SO PowerPAD |
| 中文描述： | npn型（高壓晶體管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 199K |
| 代理商： | MMBT5550 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
140
Vdc
Collector–Base Voltage
160
Vdc
Emitter–Base Voltage
6.0
Vdc
Collector Current — Continuous
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
MMBT5550
MMBT5551
V(BR)CEO
140
160
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MMBT5550
MMBT5551
V(BR)CBO
160
180
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100
°
C)
(VCB = 120 Vdc, IE = 0, TA = 100
°
C)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
ICBO
—
—
—
—
100
50
100
50
nAdc
μ
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FR–5 = 1.0
2. Alumina = 0.4
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
IEBO
—
50
nAdc
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT5550LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
*Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT5550 | Mini size of Discrete semiconductor elements |
| MMBT5550LT1G | High Voltage Transistors |
| MMBT5550 | NPN General Purpose Amplifier |
| MMBT5550LT1 | High Voltage Transistors(NPN Silicon) |
| MMBT5550 | HIGH VOLTAGE TRANSISTOR NPN SILICON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT5550 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| MMBT5550LT1 | 功能描述:兩極晶體管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550LT1G | 功能描述:兩極晶體管 - BJT SS HV XSTR NPN 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550LT3G | 功能描述:兩極晶體管 - BJT SS HV XSTR NPN 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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