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參數資料
| 型號： | MMBTA56LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Driver Transistors PNP Silicon(PNP型驅動器晶體管) |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 64K |
| 代理商： | MMBTA56LT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
MMBTA55LT1/D
MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1 is a Preferred Device
Driver Transistors
PNP Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MMBTA55
MMBTA56
V
CEO
60
80
Vdc
CollectorBase Voltage
MMBTA55
MMBTA56
V
CBO
60
80
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
SOT23
CASE 318
STYLE 6
2
3
1
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2xx M
2xx = Device Code
x = H for MMBTA55LT1
xx = GM for MMBTA56LT1
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBTA56LT1G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP 80V SOT-23 |
| MMBTA56LT1T | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R |
| MMBTA56LT3 | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT3G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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