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參數(shù)資料
| 型號(hào)： | MMBTA92E |
| 廠商： | 江蘇長(zhǎng)電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 252K |
| 代理商： | MMBTA92E |
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBTA92E
TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Power dissipation P
CM
: 0.15 W (Tamb=25
℃
)
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:2D
C
2D
B E
MAXIMUM RATINGS T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
T
J
Junction Temperature
T
stg
Storage Temperature
R
JA
Thermal Resistance, junction to Ambient
R
JC
Thermal Resistance, unction to Case
Parameter
Value
-310
-305
-5
-300
150
-55-150
200
83.3
Units
V
V
V
mA
℃
℃
℃
/W
℃
/W
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
=-200V, I
E
=0
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
-310
V
Collector-emitter breakdown voltage
V
(BR)CEO
-305
V
Emitter-base breakdown voltage
V
(BR)EBO
-5
V
μ
A
μ
A
μ
A
μ
A
Collector cut-off current
I
CBO
-0.25
V
CE
=-200V, I
B
=0
-0.25
Collector cut-off current
I
CEO
V
CE
=-300V, I
B
=0
-5
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0
-0.1
h
FE(1)
V
CE
= -10V, I
C
= -1mA
60
h
FE(2)
V
CE
= -10V, I
C
=-10mA
100
200
DC current gain
h
FE(3)
V
CE
= -10V, I
C
=-30mA
60
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-20 mA, I
B
= -2mA
-0.2
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= -20 mA, I
B
= -2mA
V
CE
=-20V, I
C
= -10mA
f=
30MHz
-0.9
V
Transition frequency
f
T
50
MHz
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