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參數資料
| 型號： | MMBTA93LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistor(PNP Silicon) |
| 中文描述： | 高壓晶體管（民進黨硅） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 57K |
| 代理商： | MMBTA93LT1 |
Zowie Technology Corporation
High Voltage Transistor
PNP Silicon
MMBTA93
1
2
1
2
3
3
SOT-23
Rating
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-200
-200
-5.0
-500
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25
Derate above 25
Thermal Resistance Junction to Ambient
o
C
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
Derate above 25
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
C
C
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
MMBTA92=2D
ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Emitter - Base Breakdowe Voltage
( I
E
= -100 uAdc, I
C
=0 )
Emitter Cutoff Curretn
( V
EB
= -3.0 Vdc, I
C
=0 )
Collector-Emitter Breakdowe Voltage
(3)
( I
C
= -1.0mAdc, I
B=0
)
Unit
Vdc
Collector-Base Breakdowe Voltage
( I
C
= -100uAdc, I
E=0
)
Vdc
Vdc
uAdc
Collector Cutoff Current
( V
CE
= -160 Vdc, I
E
= 0 )
Symbol
V
(BR)EBO
V
(BR)CEO
I
EBO
V
(BR)CBO
I
CBO
Min.
-5.0
-200
-
-200
-
Max.
-
-
-0.1
-
-0.25
uAdc
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
mW
mW /
o
C
o
C / W
o
C / W
o
C
Symbol
P
D
P
D
R
JA
R
JA
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBTA93LT1G | 功能描述:兩極晶體管 - BJT 500mA 200V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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