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參數資料
| 型號： | MMBTH24LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數： | 1/22頁 |
| 文件大?。?/td> | 291K |
| 代理商： | MMBTH24LT3 |
2–424
Motorola Small–Signal Transistors, FETs and Diodes Device Data
VHF Mixer Transistor
NPN Silicon
Designed for
fT = 400 MHz Min @ 8 mA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current – Continuous
IC
50
mAdc
DEVICE MARKING
MMBTH24LT1 = M3A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
30
—
Vdc
Collector–Base Breakdown Voltage (IC = 100 Adc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
ICBO
—
50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTH24LT1
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
1
2
3
Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
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