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參數(shù)資料
| 型號(hào)： | MMBV2101LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diodes(固態(tài)調(diào)諧二極管) |
| 中文描述： | HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 69K |
| 代理商： | MMBV2101LT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solidstate
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
Features
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current
I
F
200
mAdc
Forward Power Dissipation
@ T
= 25
°
C
Derate above 25
°
C
MMBV21xx
@ T
A
= 25
°
C
Derate above 25
°
C
MV21xx
LV2209
P
D
225
1.8
280
2.8
mW
mW/
°
C
mW
mW/
°
C
Junction Temperature
T
J
+150
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
MMBV21xx, MV21xx
LV2209
V
(BR)R
30
25
Vdc
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
A
= 25
°
C)
I
R
0.1
Adc
Diode Capacitance Temperature Co-
efficient (V
R
= 4.0 Vdc, f = 1.0 MHz)
TC
C
280
ppm/
°
C
Preferred
devices are recommended choices for future use
and best overall value.
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT23
TO92
1
2
3
1
2
yy
yyyy
AYWW
TO92 (TO226AC)
CASE 182
STYLE 1
SOT23 (TO236)
CASE 31808
STYLE 8
yyyyyy = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
6.8100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
xxx M
xxx = Specific Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING
DIAGRAMS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV2101LT1G | 功能描述:變?nèi)荻O管 30V 6.1pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV2103LT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diodes |
| MMBV2103LT1 WAF | 制造商:ON Semiconductor 功能描述: |
| MMBV2105L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diodes |
| MMBV2105LT1 | 功能描述:變?nèi)荻O管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
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