- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384741 > MMBV2108LT1 (樂(lè)山無(wú)線電股份有限公司) Silicon Tuning Diode PDF資料下載
參數(shù)資料
| 型號(hào)： | MMBV2108LT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | 硅調(diào)諧二極管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | MMBV2108LT1 |
LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109 –1/3
MV2101~MV2115
1
3
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
MV2106
MV2109
MV2115
MV2104
MV2108
MV2111
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance
—
10%
Complete Typical Design Curves
Silicon Tuning Diode
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Forward power Dissipation @T
A
= 25°C P
D
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H MMBV2108LT1=4X
MMBV2105LT1=4U MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=1.0
μ
Adc)
Reverse Voltage Leakage Current
(V
R
=25Vdc,T
A
=25°C)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
Symbol
V
R
I
F
MV21XX MMBV21XXLT1
30
200
280
2.8
+150
–55 to +150
Unit
Vdc
mAdc
m W
mW/°C
°C
°C
225
1.8
T
J
T
stg
Symbol
Min
Typ
Max
Unit
V
(BR)R
30
—
—
Vdc
I
R
—
—
0.1
μ
Adc
TC
C
—
280
—
ppm/°C
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBV2103LT1 | Silicon Tuning Diode |
| MMBV2105LT1 | Silicon Tuning Diode |
| MMBV2107LT1 | Silicon Tuning Diode |
| MMBV2101L | Silicon Tuning Diodes |
| MMBV2101LT1G | Silicon Tuning Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV2108LT1 WAF | 制造商:ON Semiconductor 功能描述: |
| MMBV2108LT1G | 功能描述:變?nèi)荻O管 30V 24.3pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類(lèi)型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV2109L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diodes |
| MMBV2109LT1 | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類(lèi)型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV2109LT1G | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類(lèi)型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。