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參數(shù)資料
| 型號： | MMBZ33VALT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236 |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 70K |
| 代理商： | MMBZ33VALT1G |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 7
1
Publication Order Number:
MMBZ5V6ALT1/D
MMBZ5V6ALT1 Series
Preferred Device
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
PbFree Packages are Available
SOT23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range 3 V to 26 V
Standard Zener Breakdown Voltage Range 5.6 V to 33 V
Peak Power 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 A
Flammability Rating UL 94 VO
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°
C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
Preferred
devices are recommended choices for future use
and best overall value.
SOT23
CASE 318
STYLE 12
1
3
2
1
2
3
xxx
MARKING
DIAGRAM
xxx
M
= Device Code
= Date Code
M
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ33VALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode |
| MMBZ33VALT3 | 功能描述:TVS二極管陣列 33V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VALT3G | 功能描述:TVS二極管陣列 33V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VCL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 26V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23, Reverse Stand-Off Voltage Vrwm:26V, Breakdown Voltage Min:31.35V, Breakdown Voltage Max:34.65V, Clamping Voltage Vc Max:46V, Peak Pulse Current Ippm:870mA, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ33VCL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 26V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
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