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參數(shù)資料
| 型號(hào)： | MMBZ5253BLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | THYRISTOR PROTECT BI-DIR 50A SMB |
| 中文描述： | 半導(dǎo)體 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | MMBZ5253BLT1 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 5
1
Publication Order Number:
MMBZ5221BLT1/D
MMBZ5221BLT1 Series
Preferred Device
Zener Voltage Regulators
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
PbFree Packages are Available
225 mW Rating on FR4 or FR5 Board
Zener Voltage Range 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°
C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Power Dissipation on FR5 Board,
(Note 1) @ T
A
= 25
°
C
Derated above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
556
°
C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ T
A
= 25
°
C
Derated above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
65 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
Device
**
Package
Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 8
3
Cathode
1
Anode
MMBZ52xxBLT1
SOT23
3000/Tape & Reel
MARKING
DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
xxx = Specific Device Code
M
= Date Code
xxx
**The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
M
MMBZ52xxBLT3
SOT23
10,000/Tape & Reel
3
1
2
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
MMBZ52xxBLT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBZ52xxBLT3G
SOT23
(PbFree)
10,000/Tape & Reel
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ5253BLT1G | 功能描述:穩(wěn)壓二極管 25V 225mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5253B-V-GS08 | 功能描述:穩(wěn)壓二極管 25 Volt 0.3W 5% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5253B-V-GS18 | 功能描述:穩(wěn)壓二極管 25 Volt 0.3 Watt 5% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5253C-G3-18 | 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOT23 |
| MMBZ5253C-V-GS08 | 功能描述:穩(wěn)壓二極管 25 Volt 0.3W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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