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參數資料
| 型號： | MMDF2C01HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 372K |
| 代理商： | MMDF2C01HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
N–Channel
P–Channel
VDSS
20
12
Vdc
Gate–to–Source Voltage
VGS
± 8.0
Vdc
Drain Current — Continuous
N–Channel
P–Channel
— Pulsed
N–Channel
P–Channel
ID
IDM
5.2
3.4
48
17
A
Operating and Storage Temperature Range
TJ and Tstg
– 55 to 150
°C
Total Power Dissipation @ TA= 25°C (2)
PD
2.0
Watts
Thermal Resistance — Junction to Ambient (2)
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds.
TL
260
°C
DEVICE MARKING
D2C01
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2C01HDR2
13
″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMDF2C01HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
D
S
G
P–Channel
D
S
G
N–Channel
CASE 751–05, Style 14
SO–8
MMDF2C01HD
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
12 VOLTS
RDS(on) = 0.045 OHM
(N–CHANNEL)
RDS(on) = 0.18 OHM
(P–CHANNEL)
Motorola Preferred Device
N–Source
1
2
3
4
8
7
6
5
Top View
N–Gate
P–Source
P–Gate
N–Drain
P–Drain
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF2C02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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