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參數(shù)資料
| 型號： | MMDF3200Z |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS |
| 中文描述： | 7100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 86K |
| 代理商： | MMDF3200Z |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
WaveFET
devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Zener Protected Gates Provide Electrostatic
Discharge Protection
Designed to withstand 200 V Machine Model
and 2000 V Human Body Model
Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
Logic Level Gate Drive — Can Be Driven by
Logic ICs
Miniature SO–8 Surface Mount Package —
Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
TJ, Tstg
Max
20
20
±
12
Unit
V
V
V
°
C
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Operating and Storage Temperature Range
– 55 to 150
DEVICE MARKING
ORDERING INFORMATION
D3200
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
4000 units
MMDF3200Z
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF3200Z/D
SEMICONDUCTOR TECHNICAL DATA
N1–Source
N1–Gate
N2–Source
N2–Gate
TOP VIEW
N1–Drain
N1–Drain
N2–Drain
N2–Drain
CASE 751–06, Style 11
SO–8
DUAL TMOS
POWER MOSFET
11.5 AMPERES
20 VOLTS
RDS(on) = 0.015 OHM
Motorola Preferred Device
N1–SOURCE
N1–GATE
8
N1–DRAIN
7
2
1
N2–SOURCE
N2–GATE
6
N2–DRAIN
5
4
3
1
2
3
4
8
7
6
5
REV 1
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| MMDF3207 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS |
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| MMDF3N02HDR2 | 功能描述:MOSFET 20V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N02HDR2G | 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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