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參數資料
| 型號： | MMDF3N02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| 中文描述： | 3.8 A, 20 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 188K |
| 代理商： | MMDF3N02HDR2 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
—
29
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
—
0.058
0.074
0.090
0.100
Ohms
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
2.0
3.88
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
455
630
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
—
184
250
Transfer Capacitance
—
45
90
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
11
22
ns
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
—
58
116
Turn–Off Delay Time
—
17
35
Fall Time
—
20
40
Turn–On Delay Time
RG = 6.0
)
—
7.0
21
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
—
32
64
Turn–Off Delay Time
—
27
54
Fall Time
—
21
42
Gate Charge
See Figure 8
VGS = 10 Vdc)
—
12.5
18
nC
(VDS = 16 Vdc, ID = 3.0 Adc,
—
1.3
—
—
2.8
—
—
2.4
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.79
0.72
1.3
—
Vdc
Reverse Recovery Time
See Figure 15
dIS/dt = 100 A/
μ
s)
trr
ta
—
23
—
ns
(IS = 3.0 Adc, VGS = 0 Vdc,
—
18
—
tb
—
5.0
—
Reverse Recovery Stored Charge
QRR
—
0.025
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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