- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369920 > MMDF3N06HD (MOTOROLA INC) DUAL TMOS POWER MOSFET 60 VOLTS PDF資料下載
參數(shù)資料
| 型號(hào)： | MMDF3N06HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 60 VOLTS |
| 中文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 213K |
| 代理商： | MMDF3N06HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Dual HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. Dual HDTMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in portable and battery powered products
such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
Value
60
±
20
3.3
16.5
Unit
Vdc
Vdc
Adc
Apk
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Source Current — Continuous @ TA = 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25
)
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
1.7
2.0
Adc
Watts
°
C
mJ
– 55 to 150
105
R
θ
JA
TL
62.5
260
°
C/W
°
C
DEVICE MARKING
D3N06
ORDERING INFORMATION
Device
Reel Size
13
″
Tape Width
Quantity
MMDF3N06HDR2
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
12 mm embossed tape
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N06HD/D
DUAL TMOS
POWER MOSFET
60 VOLTS
RDS(on) = 100 m
CASE 751–05, Style 11
SO–8
D
S
G
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
Motorola Preferred Device
D
S
G
Preferred
devices are Motorola recommended choices for future use and best overall value.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDF4C03HD | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| MMDF5N02Z | DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| MMDF6N03HD | DUAL TMOS POWER MOSFET 30 VOLTS |
| MMSF3P03HDR2 | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
| MMSF3PO3HD | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF4C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。