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參數資料
| 型號： | MMDT4146 |
| 廠商： | Diodes Inc. |
| 英文描述： | COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 互補NPN /進步黨小信號晶體管表面貼裝 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 60K |
| 代理商： | MMDT4146 |
DS30162 Rev. D-1
1 of 2
MMDT4146
MMDT4146
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Complementary Pair
One 4124-Type NPN,
One 4126-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
NPN 4124 Section
60
40
6.0
200
200
625
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
K/W
Features
Maximum Ratings, NPN 4124 Section
@ T
A
= 25 C unless otherwise specified
Mechanical Data
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K12
Weight: 0.006 grams (approx.)
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
All Dimensions in mm
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
Notes:
1. Valid provided that terminals are kept at ambient temperature. Total device dissipation.
2. Maximum combined dissipation.
A
M
J
L
F
D
B C
H
K
KXX
C
2
B
1
E
1
E
2
B
2
C
1
E
1
, B
1
, C
1
= PNP4126 Section
E
2
, B
2
, C
2
= NPN4124 Section
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
PNP 4126 Section
-40
-40
-5.0
-200
200
625
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
K/W
Maximum Ratings, PNP 4126 Section
@ T
A
= 25 C unless otherwise specified
N
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDT4146_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4146_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4146-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT4146-7-F | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT4401 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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