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參數資料
| 型號： | MMDT5551 |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 雙npn型小信號晶體管表面貼裝 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 41K |
| 代理商： | MMDT5551 |
DS30172 Rev. C-1
1 of 2
MMDT5551
MMDT5551
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMDT5401)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
MMDT5551
180
160
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
K/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
F
D
B C
H
K
C
2
B
1
E
1
E
2
B
2
C
1
K
Mechanical Data
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K4N
Weight: 0.006 grams (approx.)
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
All Dimensions in mm
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Maximum combined dissipation.
N
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDT5551_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Plastic-Encapsulate Transistors |
| MMDT5551_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551-7 | 功能描述:兩極晶體管 - BJT 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT5551-7-F | 功能描述:兩極晶體管 - BJT 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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