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參數資料
| 型號： | MMFT1N10 |
| 廠商： | Motorola, Inc. |
| 英文描述： | MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
| 中文描述： | 中功率的TMOS場效應1安培100伏 |
| 文件頁數： | 3/10頁 |
| 文件大小： | 236K |
| 代理商： | MMFT1N10 |
3
Motorola TMOS Power MOSFET Transistor Device Data
R
R
R
10
Figure 1. On Region Characteristics
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25
°
C
Figure 2. Gate–Threshold Voltage Variation
With Temperature
TJ, JUNCTION TEMP (
°
C)
Figure 3. Transfer Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. On–Resistance versus Junction
Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
VDS = VGS
ID = 1.0 mA
I
8
6
4
2
0
10
8
6
4
2
0
V
(
1.1
–50
1.0
0.9
0.8
0.7
0
50
100
150
4
I
3
2
1
0
10
8
6
4
2
0
0.5
0
0.3
0.2
0.1
0
2
4
0.4
0.5
0.4
0.3
0.1
0
16
12
10
8
6
4
0.5
–50
0.3
0.2
0.1
0
0
50
100
150
0.4
0.2
14
7 V
6 V
VGS = 4 V
5 V
9 V
8 V
VDS = 10 V
100
°
C
TJ = –55
°
C
25
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
ID = 1 A
VGS = 10 V
ID = 1 A
10 V
VGS = 10 V
1.2
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相關代理商/技術參數 |
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|---|---|
| MMFT1N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
| MMFT1N10ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT1N10ET3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMFT1N20T1 | 制造商:ON Semiconductor 功能描述: |
| MMFT2406T | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 700 mA 240 VOLTS |
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