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參數資料
| 型號： | MMPQ2222A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Quad General Purpose Transistors |
| 中文描述： | 500 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 108K |
| 代理商： | MMPQ2222A |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MMPQ2222
MMPQ2222A
Unit
Collector–Emitter Voltage
VCEO
VCB
VEB
IC
30
40
Vdc
Collector–Base Voltage
60
75
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
500
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
PD
0.52
4.2
1.0
8.0
Watts
mW/
°
C
Total Power Dissipation
@ TC = 25
°
C
Derate above 25
°
C
PD
0.8
6.4
2.4
19.2
Watts
mW/
°
C
Operating and Storage
Junction Temperature Range
TJ, Tstg
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MMPQ2222
MMPQ2222A
V(BR)CEO
30
40
—
—
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
MMPQ2222
MMPQ2222A
V(BR)CBO
60
75
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(IB = 10 Adc, IC = 0)
V(BR)EBO
5.0
—
—
—
—
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
MMPQ2222
MMPQ2222A
ICBO
—
—
—
—
50
10
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
—
100
nAdc
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMPQ2222/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 751B–05, STYLE 4
SO–16
1
16
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MMPQ3725 | Quad Core Drier Transistor |
| MMPQ3725 | NPN Switching Transistor |
| MMQA | SC-59 Quad Monolithic Common Anode |
| MMQA | SC-74 Quad Monolithic Common Anode |
| MMSD1000LT1 | SWITCHING DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMPQ2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 40V SOIC |
| MMPQ2222A_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2222A-CUT TAPE | 制造商:FAIRCHILD 功能描述:MMPQ Series 40 V CE Breakdown .5 A NPN General Purpose Amplifier SOIC-16 Package |
| MMPQ2222AR1 | 功能描述:兩極晶體管 - BJT 500mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2222AR1G | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 40V 0.5A 16-Pin SOIC T/R |
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