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參數資料
| 型號： | MMPQ2907AR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SO-16 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 296K |
| 代理商： | MMPQ2907AR2 |
2–432
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MMPQ2907
MMPQ2907A
Unit
Collector – Emitter Voltage
VCEO
–40
–60
Vdc
Collector – Base Voltage
VCB
–60
Vdc
Emitter – Base Voltage
VEB
–5.0
Vdc
Collector Current — Continuous
IC
–600
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
0.52
4.2
1.0
8.0
Watts
mW/
°C
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
0.8
6.4
2.4
19.2
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
MMPQ2907
(IC = –10 mAdc, IB = 0)
MMPQ2907A
V(BR)CEO
–40
–60
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
MMPQ2907
(VCB = –50 Vdc, IE = 0)
MMPQ2907A
ICBO
—
–50
–10
nAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–50
nAdc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle = 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMPQ2907
MMPQ2907A
CASE 751B–05, STYLE 4
SO–16
1
16
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
REV 1
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| MMPQ2907A | 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ2907AR1 | 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ6842 | 200 mA, 30 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ6842R2 | 200 mA, 30 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMPQ3467 | 功能描述:兩極晶體管 - BJT 1A 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3725 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3904_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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