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參數資料
| 型號： | MMQA12VT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CIR 60C 60#16 SKT RECP |
| 中文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 318F-05, SC-74, 6 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 67K |
| 代理商： | MMQA12VT1 |
MMQA Quad Common Anode Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (V
F
= 0.9 V Max @ I
F
= 10 mA)
Breakdown Voltage
Max
Reverse
Leakage
Current
Max
Reverse
Surge
Current
Max
Reverse
Voltage @
I
RSM
(Note 6)
(Clamping
Voltage)
Maximum
Temperature
Coefficient
of V
Z
Capacitance
@ 0 Volt
Bias, 1 MHz
V
ZT
(Note 5)
(V)
@ I
ZT
I
R
V
R
Max Zener
Impedance
(Note 7)
(pF)
Device
Min
Nom
Max
(mA)
(nA)
(V)
Z
ZT
@ I
ZT
( )
(mA)
I
RSM
(A)
V
RSM
(V)
(mV/
°
C)
Min
Max
MMQA5V6T1,T3
5.32
5.6
5.88
1.0
2000
3.0
400
3.0
8.0
1.26
MMQA6V2T1,T3
5.89
6.2
6.51
1.0
700
4.0
300
2.66
9.0
10.6
MMQA6V8T1,T3
6.46
6.8
7.14
1.0
500
4.3
300
2.45
9.8
10.9
100
250
MMQA12VT1,T3
11.4
12
12.6
1.0
75
9.1
80
1.39
17.3
14
MMQA13VT1
12.4
13
13.7
1.0
75
9.8
80
1.29
18.6
15
MMQA15VT1,T3
14.3
15
15.8
1.0
75
11
80
1.1
21.7
16
MMQA18VT1,T3
17.1
18
18.9
1.0
75
14
80
0.923
26
19
MMQA20VT1,T3
19
20
21
1.0
75
15
80
0.84
28.6
20.1
MMQA21VT1,T3
20
21
22.1
1.0
75
16
80
0.792
30.3
21
MMQA22VT1,T3
20.9
22
23.1
1.0
75
17
80
0.758
31.7
22
MMQA24VT1,T3
22.8
24
25.2
1.0
75
18
100
0.694
34.6
25
MMQA27VT1,T3
25.7
27
28.4
1.0
75
21
125
0.615
39
28
MMQA30VT1,T3
28.5
30
31.5
1.0
75
23
150
0.554
43.3
32
MMQA33VT1,T3
31.4
33
34.7
1.0
75
25
200
0.504
48.6
37
1. Non-repetitive current pulse per Figure 5 and derate above T
A
= 25
°
C per Figure 4.
2. Non-repetitive current pulse per Figure 6 and derate above T
A
= 25
°
C per Figure 4.
3. FR-5 = 1.0 x 0.75 x 0.62 in.
4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
5. V
Z
measured at pulse test current I
T
at an ambient temperature of 25
°
C.
6. Surge current waveform per Figure 5 and derate per Figure 4.
7. Z
ZT
is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I
Z(AC)
= 0.1 I
Z(DC)
,
with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
300
V
Z
, NOMINAL ZENER VOLTAGE (V)
C
250
200
150
100
50
0
5.6
6.8
12
20
27
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF V
Z
NOM
Figure 1. Typical Capacitance
5.6
6.8
20
27
10,000
1,000
100
10
0
Figure 2. Typical Leakage Current
IR
V
Z
, NOMINAL ZENER VOLTAGE (V)
33
33
+150
°
C
+25
°
C
40
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| MMQA-D | SC-74 Quad Monolithic Common Anode |
| MMQA15VT1 | SC-74 Quad Monolithic Common Anode |
| MMQA15VT3 | SC-74 Quad Monolithic Common Anode |
| MMQA12VT1G | SC-74 Quad Monolithic Common Anode |
| MMQA12VT3 | SC-74 Quad Monolithic Common Anode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMQA12VT1G | 功能描述:TVS二極管陣列 12V 150W TVS Quad Array RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMQA12VT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SC-74 Quad Monolithic Common Anode |
| MMQA13V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Direct ProTek Replacement:PSMS12 |
| MMQA13VT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Transient Voltage Suppressors for ESD Protection |
| MMQA13VT1 | 功能描述:TVS二極管陣列 13V 150W TVS Quad RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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