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參數(shù)資料
| 型號： | MMQA12VT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SC-74 Quad Monolithic Common Anode |
| 中文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 318F-05, SC-74, 6 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 67K |
| 代理商： | MMQA12VT3 |
MMQA Quad Common Anode Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (V
F
= 0.9 V Max @ I
F
= 10 mA)
Breakdown Voltage
Max
Reverse
Leakage
Current
Max
Reverse
Surge
Current
Max
Reverse
Voltage @
I
RSM
(Note 6)
(Clamping
Voltage)
Maximum
Temperature
Coefficient
of V
Z
Capacitance
@ 0 Volt
Bias, 1 MHz
V
ZT
(Note 5)
(V)
@ I
ZT
I
R
V
R
Max Zener
Impedance
(Note 7)
(pF)
Device
Min
Nom
Max
(mA)
(nA)
(V)
Z
ZT
@ I
ZT
( )
(mA)
I
RSM
(A)
V
RSM
(V)
(mV/
°
C)
Min
Max
MMQA5V6T1,T3
5.32
5.6
5.88
1.0
2000
3.0
400
3.0
8.0
1.26
MMQA6V2T1,T3
5.89
6.2
6.51
1.0
700
4.0
300
2.66
9.0
10.6
MMQA6V8T1,T3
6.46
6.8
7.14
1.0
500
4.3
300
2.45
9.8
10.9
100
250
MMQA12VT1,T3
11.4
12
12.6
1.0
75
9.1
80
1.39
17.3
14
MMQA13VT1
12.4
13
13.7
1.0
75
9.8
80
1.29
18.6
15
MMQA15VT1,T3
14.3
15
15.8
1.0
75
11
80
1.1
21.7
16
MMQA18VT1,T3
17.1
18
18.9
1.0
75
14
80
0.923
26
19
MMQA20VT1,T3
19
20
21
1.0
75
15
80
0.84
28.6
20.1
MMQA21VT1,T3
20
21
22.1
1.0
75
16
80
0.792
30.3
21
MMQA22VT1,T3
20.9
22
23.1
1.0
75
17
80
0.758
31.7
22
MMQA24VT1,T3
22.8
24
25.2
1.0
75
18
100
0.694
34.6
25
MMQA27VT1,T3
25.7
27
28.4
1.0
75
21
125
0.615
39
28
MMQA30VT1,T3
28.5
30
31.5
1.0
75
23
150
0.554
43.3
32
MMQA33VT1,T3
31.4
33
34.7
1.0
75
25
200
0.504
48.6
37
1. Non-repetitive current pulse per Figure 5 and derate above T
A
= 25
°
C per Figure 4.
2. Non-repetitive current pulse per Figure 6 and derate above T
A
= 25
°
C per Figure 4.
3. FR-5 = 1.0 x 0.75 x 0.62 in.
4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
5. V
Z
measured at pulse test current I
T
at an ambient temperature of 25
°
C.
6. Surge current waveform per Figure 5 and derate per Figure 4.
7. Z
ZT
is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I
Z(AC)
= 0.1 I
Z(DC)
,
with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
300
V
Z
, NOMINAL ZENER VOLTAGE (V)
C
250
200
150
100
50
0
5.6
6.8
12
20
27
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF V
Z
NOM
Figure 1. Typical Capacitance
5.6
6.8
20
27
10,000
1,000
100
10
0
Figure 2. Typical Leakage Current
IR
V
Z
, NOMINAL ZENER VOLTAGE (V)
33
33
+150
°
C
+25
°
C
40
°
C
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