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參數(shù)資料
| 型號： | MMQA6V8T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SC-74 Quad Monolithic Common Anode |
| 中文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 318F-05, SC-74, 6 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 67K |
| 代理商： | MMQA6V8T1 |
MMQA Quad Common Anode Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. Steady State Power Derating Curve
Figure 4. Pulse Derating Curve
Figure 5. 10
×
1000 s Pulse Waveform
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
PD
T
A
, AMBIENT TEMPERATURE (
°
C)
FR-5 BOARD
ALUMINA SUBSTRATE
100
90
80
70
60
50
40
30
20
10
00
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
P
O
°
V
100
50
00
1
2
3
4
t, TIME (ms)
t
r
t
P
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF I
RSM
.
t
r
≤
10 s
HALF VALUE
I
RSM
2
PEAK VALUEI
RSM
Figure 6. 8
×
20 s Pulse Waveform
Figure 7. Maximum NonRepetitive Surge
Power, Ppk versus PW
Figure 8. Typical Maximum NonRepetitive
Surge Power, Ppk versus V
BR
P
0.1
1.0
10
100
1000
1.0
10
100
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is the clamping voltage at
I
Z
(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
t, TIME ( s)
%
200
180
160
140
120
100
80
60
40
20
05.6
6.8
12
20
33
NOMINAL V
Z
P
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
PEAK VALUE I
RSM
@ 8 s
HALF VALUE I
RSM
/2 @ 20 s
27
,
P
8
×
20 WAVEFORM AS PER FIGURE 6
10
×
100 WAVEFORM AS PER FIGURE 5
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| MMQA6V8T1G | 功能描述:TVS二極管陣列 6.8V 150W TVS Quad Array RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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