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參數資料
| 型號： | MMSD16128808S-V-IS |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | MEMORY MODULE SDRAM 128Mx16-SOP |
| 中文描述： | 內存模塊內存128Mx16燮 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MMSD16128808S-V-IS |
3D PLUS S.A. reserves the right to change or cancel products or specifications without notice
3DFP-0014-REV : 4 - SEPT. 2003
MEMORY MODULE
SDRam 128Mx16-SOP
Synchronous Dynamic Ram
MODULE
MMSD16128808S-V
2Gbit SDRam organized as 128Mx16, based on 32Mx8
ULYSSE
(3DSD2048-163)
Pin Assignment (Top View)
SOP 58 - (Pitch : 0.80 mm)
Features
General description
SDRam Memory Module
The MMSD16128808S-V is a high-speed highly integrated
Synchronous Dynamic Random Access Memory containing
2,147,483,648 bits.
It is organized with four banks of 512 Mbit.
Each bank has a 16-bit interface and is selected with specific #CS
CLK and CKE.
It is particularly well suited for use in high reliability, high
performance and high density system applications, such as
solid state mass recorder, server or workstation.
The MMSD16128808S-V is packaged in a 58 pin SOP.
1
3
2
4
6
8
Bank 0, #CS0
Bank 1, #CS1
DQ0-DQ7
Bank 2, #CS2
Bank 3, #CS3
DQM0
DQ8-DQ15
DQM1
7
5
CLK0, CKE0
CLK1, CKE1
CLK0, CKE0
CLK1, CKE1
VDDQ
DQ8
DQ1
VSSQ
DQ9
DQ2
VDDQ
DQ10
DQ3
VSSQ
DQ11
VDD
#CS1
#WE
#CAS
#RAS
#CS0
BA0
VDD
DQ0
A0
A1
A2
A3
VDD
#CS2
#CS3
CLK1
CKE1
VSS
A4
A5
A6
A7
A8
A9
A11
A12
BA1
A10/AP
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
21
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
1
2
3
VSS
DQ15
VDDQ
DQ4
DQ14
VSSQ
DQ5
DQ13
VDDQ
DQ6
DQ12
DQ7
VSS
CKE0
CLK0
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
VSSQ
DQM0
DQM1
- Stack of eight 256Mbit SDRam.
- Organized as 128Mx16-bit.
- Single +3.3V ±0.3V power supply.
- Fully synchronous ; all signals registered on positive edge of
system clock.
- Internal pipelined operation ; column adress can be changed
every clock cycle.
- Programmable burst lengths ; 1, 2, 4, 8 or full page.
- Auto Precharge, includes Concurrent Auto Precharge, and
Auto Refresh Modes.
- Self Refresh Modes.
- LVTTL-compatible inputs and outputs.
- Available Temperature Range :
0°C to +70°C
-40°C to +85°C
- Available with screening option for high reliability application
(Space, etc...).
(All others signals are common to the eight memories)
FUNCTIONAL BLOCK DIAGRAM
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