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參數資料
型號: MMSF5P02HDR2
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數: 1/12頁
文件大小: 208K
代理商: MMSF5P02HDR2
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
DEVICE MARKING
ORDERING INFORMATION
S5P02H
Device
Reel Size
Tape Width
Quantity
S5P02H
MMSF5P02HDR2
13
12 mm embossed tape
4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMSF5P02HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
CASE 751–05, Style 13
SO–8
MMSF5P02HD
SINGLE TMOS
POWER MOSFET
8.7 AMPERES
20 VOLTS
RDS(on) = 0.03 OHM
Motorola Preferred Device
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
D
S
G
REV 2
相關PDF資料
PDF描述
MMSF7N03HDR2 8.2 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
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MMUN2113LT3G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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相關代理商/技術參數
參數描述
MMSF7N03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 8.0 AMPERES 30 VOLTS
MMSF7N03HDR2 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述:
MMSF7N03Z 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS
MMSF7N03ZR2 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MMSF7P03HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 7 A, 30 V, P−Channel SO−8
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