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參數(shù)資料
| 型號： | MMST918 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | NPN High Frequency Transistor |
| 中文描述： | npn型高頻晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 70K |
| 代理商： | MMST918 |
MMST918 / PN918
Transistors
NPN High Frequency Transistor
1/2
MMST918 / PN918
z
Features
1) High current gain-bandwidth product f
T
=600MHz
z
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic(pieces)
MMST918
SMT3
RVX
T146
3000
PN918
TO-92
T93
3000
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
30
15
3
50
0.2
0.310
150
55 to
+
150
Unit
V
V
V
A
W
W
°
C
°
C
P
C
MMST918
PN918
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
z
Electrical characteristics
(Ta = 25
°
C)
z
External dimensions
(Unit : mm)
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
(1) Emitter
(2) Base
(3) Collector
MMST918
PN918
0
～
0.1
2
±
0
1
0
～
0
1.1
0.8
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0
0
0.1
+
0.2
+
0.1
0.06
+
0.1
0.05
(2)
(1)
(3)
4
±
0
(
2
4.8
±
0.2
3.7
±
0.2
5
0.45
2.3
0.5
±
0.1
0.05
+
0.15
2.5
+
0.3
0.1
(1)
(2)
(3)
All terminals have same dimensions
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
30
15
3.0
20
Typ.
Max.
0.01
1.0
Unit
V
V
V
μ
A
μ
A
Conditions
I
CBO
I
C
=
1.0
μ
A
I
C
=
3.0mA
I
E
=
10
μ
A
V
CB
=
15V
V
CB
=
15V , I
E
=0 , Ta=150
°
C
I
C
=
3.0mA , V
CE
=
1.0V
V
BE(sat)
f
T
1.0
1.7
3.0
2.0
6.0
V
V
CE(sat)
0.4
V
I
C
/I
B
=
10mA/1mA
I
C
/I
B
=
10mA/1mA
I
C
=
4.0mA , V
CE
=
10V, f
=
100MHz
V
CB
=
10V , I
E
=0 , f
=
140kHz
V
CB
=
0 , I
E
=0 , f
=
140kHz
V
EB
=
0.5V , I
C
=0 , f
=
140kHz
I
C
=
1.0mA , V
CE
=
6.0V ,RG
=
400
, f
=
60MHz
V
CB
=
12V , I
C
=
6.0mA , f=200MHz
V
CB
=
15V , I
C
=
8.0mA , f=500MHz
V
CB
=
15V , I
C
=
8.0mA , f=500MHz
h
FE
Cob
600
15
30
25
MHz
pF
pF
pF
dB
dB
mW
%
Cib
NF
Gpe
Pout
η
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Transition frequency
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Emitter input capacitance
Noise figure
Power gain
Output power
Collector efficiency
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