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參數資料
| 型號： | MMSTA13 |
| 廠商： | Diodes Inc. |
| 英文描述： | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| 中文描述： | npn型表面貼裝達林頓晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 37K |
| 代理商： | MMSTA13 |
DS30165 Rev. B-1
1 of 1
MMSTA13/MMSTA14
MMSTA13/MMSTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMSTA63/MMSTA64)
Ideal for Medium Power Amplification and
Switching
High Current Gain
Ultra-Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMSTA13 Marking K2D, K3D
MMSTA14 Marking K3D
Weight: 0.006 grams (approx.)
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300 s, duty cycle
2%.
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.25
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
MMSTA13
MMSTA14
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
30
30
10
300
200
625
K/W
C
-55 to +150
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CEO
I
CBO
I
EBO
30
V
nA
nA
I
C
= 100 A V
BE
= 0V
V
CB
= 30V, I
E
= 0
V
EB
= 10V, I
C
= 0
100
100
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMSTA13
MMSTA14
MMSTA13
MMSTA14
h
FE
5,000
10,000
10,000
20,000
I
C
= 10mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 100 A
I
C
= 100mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8.0 Typical
15 Typical
pF
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 5.0V, I
C
= 10mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
125
MHz
N
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMSTA13_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMSTA13_11 | 制造商:ROHM 制造商全稱:Rohm 功能描述:NPN small signal transistor |
| MMSTA13_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMSTA13-7 | 功能描述:達林頓晶體管 30V 200mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMSTA13-7-F | 功能描述:達林頓晶體管 30V 200mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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