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參數資料
| 型號： | MMSTA42 |
| 廠商： | Diodes Inc. |
| 英文描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | npn型小信號晶體管表面貼裝 |
| 文件頁數： | 2/2頁 |
| 文件大小： | 46K |
| 代理商： | MMSTA42 |
DS30175 Rev. 3-2
2 of 2
MMSTA42
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
300
300
6.0
V
V
V
nA
nA
I
C
= 100 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100 A, I
C
= 0
V
CB
= 200V, I
E
= 0
V
CE
= 6.0V, I
C
= 0
100
100
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
25
40
40
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
I
C
= 20mA, I
B
= 2.0mA
I
C
= 20mA, I
B
= 2.0mA
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
0.5
0.9
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
3.0
pF
V
CB
= 20V, f = 1.0MHz, I
E
= 0
V
= 20V, I
C
= 10mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
50
MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Ordering Information
(Note 3)
Device
MMSTA42-7
Packaging
SOT-323
Shipping
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.Marking Information
K3M
Y
K3M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMSTA42_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA42_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Small Signal Transistors |
| MMSTA42_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA42-7 | 功能描述:兩極晶體管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMSTA42-7-F | 功能描述:兩極晶體管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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