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參數(shù)資料
型號: MMSZ10T1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: CTV 99C 97#22D 2#8(TWINAX) SKT
中文描述: 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: LEAD FREE, PLASTIC, CASE 425-04, 2 PIN
文件頁數(shù): 1/6頁
文件大小: 78K
代理商: MMSZ10T1
Semiconductor Components Industries, LLC, 2004
June, 2004 Rev. 1
1
Publication Order Number:
MMSZ2V4ET1/D
MMSZ2V4ET1 Series
Zener Voltage Regulators
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.
Specification Features
500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8
X
20 s)
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°
C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 s (Note 1)
@ T
L
25
°
C
P
pk
225
Watts
Total Power Dissipation on FR5 Board,
(Note 2) @ T
L
= 75
°
C
Derated above 75
°
C
P
D
500
6.7
mW
mW/
°
C
Thermal Resistance
JunctiontoAmbient (Note 3)
R
JA
340
°
C/W
Thermal Resistance
JunctiontoLead (Note 3)
R
JL
150
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11
2. FR5 = 3.5 X 1.5 inches, using the On minimum recommended footprint as
shown in Figure 12.
3. Thermal Resistance measurement obtained via infrared Scan Method
Device
Package
Shipping
ORDERING INFORMATION
SOD123
CASE 425
STYLE 1
1
Cathode
2
Anode
MMSZxxxET1
SOD123
3000/Tape & Reel
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
xx
M
= Specific Device Code
= Date Code
xx M
1
2
MMSZxxxET3
SOD123
10,000/Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMSZ10T1G 功能描述:穩(wěn)壓二極管 10V 500mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
MMSZ10T3 功能描述:穩(wěn)壓二極管 10V 500mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
MMSZ10T3G 功能描述:穩(wěn)壓二極管 10V 500mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
MMSZ10V 制造商:YEASHIN 制造商全稱:YEASHIN 功能描述:500mW SOD-123 SURFACE MOUNT
MMSZ10VB 制造商:YEASHIN 制造商全稱:YEASHIN 功能描述:500mW SOD-123FL SURFACE MOUNT
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