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參數資料
| 型號： | MMSZ9V1ET1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 齊納二極管 |
| 英文描述： | 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | PLASTIC, CASE 425-04, 2 PIN |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MMSZ9V1ET1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 5
1
Publication Order Number:
MMSZ2V4ET1/D
MMSZ2V4ET1 Series
Zener Voltage Regulators
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.
Specification Features
500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 X 20 ms)
PbFree Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20
ms (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR5 Board,
Derated above 75
°C
PD
500
6.7
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
(Note 3)
RqJA
340
°C/W
Thermal Resistance, JunctiontoLead
(Note 3)
RqJL
150
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 11
2. FR5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
http://onsemi.com
SOD123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1
2
Device
Package
Shipping
ORDERING INFORMATION
MMSZxxxET1
SOD123
(PbFree)
3000/Tape & Reel
MMSZxxxET3
SOD123
(PbFree)
10,000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
DEVICE MARKING INFORMATION
xxx = Device Code
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
xxx M
G
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| MMSZ9V1T1 | 功能描述:穩壓二極管 9.1V 500mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMSZ9V1T1G | 功能描述:穩壓二極管 9.1V 500mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMSZ9V1T3 | 功能描述:穩壓二極管 9.1V 500mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMT05A230T3 | 功能描述:硅對稱二端開關元件 50A Surge 265V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT05A230T3_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD |
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