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參數資料
| 型號： | MMT10V400 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:0.5m; Sensor Output:NPN LO; Switch Terminals:Quick Connect; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensing Mode:Diffuse |
| 中文描述： | 400 V, 100 A, SILICON SURGE PROTECTOR |
| 封裝： | CASE 416A-01, 2 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 90K |
| 代理商： | MMT10V400 |
3
Motorola Thyristor Device Data
Figure 2. Typical Holding Current
TJ, JUNCTION TEMPERATURE (
°
C)
80
70
60
50
40
30
20
10
0
600
550
500
450
400
350
300
250
200
I
Figure 3. Holding Current Temperature Coefficient
IH, HOLDING CURRENT AT 0
°
C (mA)
250
200
0
–1
–2
–3
–4
300
400
350
450
550
500
600
TYPICAL LOW
TYPICAL
I
T
°
Figure 4. Normalized Maximum 60 Hz VBO
versus Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
140
120
100
80
60
40
20
0
–20
1.2
1.15
0.9
N
Figure 5. Temperature Dependence of 60 Hz
Breakover Current
TJ, JUNCTION TEMPERATURE PRIOR TO TEST (
°
C)
10
1
0.1
1.1
1.05
1
0.95
The thermal coefficient of VF(BR) is similar to that of a zener
diode. IBO falls with temperature, reducing the zener
impedance contribution to VBO. This causes the VBO
temperature coefficient perature to be less than or equal to the
VF(BR) coefficient. The graph allows the estimation of the
maximum voltage rise of either parameter.
NORMALIZED
TO 25
°
C
140
120
100
80
60
40
20
0
–40
–20
160
I
Note: The behavior of the breakover current during AC operation
is complex, due to junction heating, case heating and thermal
interaction between the device halves. Microplasma conduction
at the beginning of breakdown sometimes results in higher local
current densities and earlier than predicted switching. This
reduces power dissipation and stress on the device.
MAXIMUM IBO = 1.0 A
at 25
°
C
MINIMUM IBO UNIT
FIRST HALF–CYCLE
f = 60 Hz
VOC = 1000 V (rms)
IOC = 1.0 A (rms)
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