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參數資料
| 型號： | MMUN2212LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置電阻晶體管) |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 99K |
| 代理商： | MMUN2212LT1 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 7
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT-23 package which is designed for low power surface mount
applications.
Features
Simplifies Circuit Design
Reduces Board Space and Component Count
PbFree Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
°
C/W
Thermal Resistance, Junction-to-Ambient
R
JA
508 (Note 1)
311 (Note 2)
°
C/W
Thermal Resistance, Junction-to-Lead
R
JL
174 (Note 1)
208 (Note 2)
°
C/W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ minimum pad
2. FR4 @ 1.0 x 1.0 inch pad
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
ORDERING INFORMATION
A8x M
1
A8x
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
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| MMUN2238LT1 | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置電阻晶體管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMUN2212LT1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2212LT3 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2212LT3G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2212RLT1 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2213 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor NPN Silicon |
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