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參數資料
| 型號： | MMUN2212LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 104K |
| 代理商： | MMUN2212LT3 |
Semiconductor Components Industries, LLC, 2004
May, 2004 Rev. 4
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space and Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25°C
(Note 1) Derate above 25
°C
PD
*200
1.6
mW
mW/
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1(K)
R2(K)
MMUN2211LT1
A8A
10
MMUN2212LT1
A8B
22
MMUN2213LT1
A8C
47
MMUN2214LT1
A8D
10
47
MMUN2215LT1
A8E
10
∞
MMUN2216LT1
A8F
4.7
∞
MMUN2230LT1
A8G
1.0
MMUN2231LT1
A8H
2.2
MMUN2232LT1
A8J
4.7
MMUN2233LT1
A8K
4.7
47
MMUN2234LT1
A8L
22
47
MMUN2238LT1
A8R
2.2
∞
MMUN2241LT1
A8U
100
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
A8x = Device Code
x
= (See Table)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
1
2
3
12
3
A8x
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMUN2211LT1
SOT23
3000/Tape & Reel
MMUN2212LT1
SOT23
3000/Tape & Reel
MMUN2213LT1
SOT23
3000/Tape & Reel
MMUN2214LT1
SOT23
3000/Tape & Reel
MMUN2215LT1
SOT23
3000/Tape & Reel
MMUN2216LT1
SOT23
3000/Tape & Reel
MMUN2230LT1
SOT23
3000/Tape & Reel
MMUN2231LT1
SOT23
3000/Tape & Reel
MMUN2232LT1
SOT23
3000/Tape & Reel
MMUN2233LT1
SOT23
3000/Tape & Reel
MMUN2234LT1
SOT23
3000/Tape & Reel
MMUN2238LT1
SOT23
3000/Tape & Reel
MMUN2241LT1
SOT23
3000/Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| MMUN2213LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2238LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2233LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2232LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2234LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMUN2212LT3G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2212RLT1 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2213 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor NPN Silicon |
| MMUN2213L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 47 k, R2 = 47 k |
| MMUN2213LT1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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