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參數資料
| 型號： | MMUN2215LT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | TO-236AB, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 181K |
| 代理商： | MMUN2215LT3 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
*200
1.6
mW
mW/
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θJA
625
°C/W
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +150
°C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
A8A
A8B
A8C
A8D
10
22
47
10
22
47
MMUN2214LT1
MMUN2215LT1(2)
MMUN2216LT1(2)
MMUN2230LT1(2)
MMUN2231LT1(2)
A8D
A8E
A8F
A8G
A8H
10
4.7
1
22
47
∞
1
22
MMUN2231LT1(2)
MMUN2232LT1(2)
MMUN2233LT1(2)
MMUN2234LT1(2)
A8H
A8J
A8K
A8L
2.2
4.7
22
2.2
4.7
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMUN2211LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
MMUN2211LT1
SERIES
1
2
3
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
(Replaces MMUN2211T1/D)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMUN2215RLT1 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2216 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor NPN Silicon |
| MMUN2216L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 4.7 k, R2 = k |
| MMUN2216LT1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2216LT1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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