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參數資料
| 型號： | MMUN2215RLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 294K |
| 代理商： | MMUN2215RLT1 |
LESHAN RADIO COMPANY, LTD.
Q2–1/8
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
1
3
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Bias Resistor Transistor
MAXIMUM RATINGS
(T
A
= 2
5°
C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 2
5°
C
(1)
Derate above 2
5°
C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
Device
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW
/°
C
Symbol
R
θ
JA
T
J
, T
stg
Value
625
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
T
L
Marking
R1 (K)
R2 (K)
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
(2)
MMUN2216RLT1
(2)
MMUN2230RLT1
(2)
MMUN2231RLT1
(2)
MMUN2232RLT1
(2)
MMUN2233RLT1
(2)
MMUN2234RLT1
(2)
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
10
22
47
10
10
4.7
1
2.2
4.7
4.7
22
10
22
47
47
1
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
R1
R2
PIN3
Collector
(output)
PIN1
base
(Input)
PIN2
Emitter
(Ground)
8
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| MNA-6 | Monolithic Amplifiers High Directivity, 50з, 0.5 to 5.9 GHz |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMUN2216 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor NPN Silicon |
| MMUN2216L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 4.7 k, R2 = k |
| MMUN2216LT1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2216LT1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2216LT1G | 制造商:ON Semiconductor 功能描述:BRT TRANSISTOR 50V 4.7KOHM ((NW)) |
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