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參數資料
| 型號： | MMVL109T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Epicap Diodes |
| 中文描述： | VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 477-02, 2 PIN |
| 文件頁數： | 2/3頁 |
| 文件大小： | 52K |
| 代理商： | MMVL109T1G |
MMVL109T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (I
R
= 10 Adc)
V
(BR)R
30
Vdc
Reverse Voltage Leakage Current (V
R
= 25 Vdc)
I
R
0.1
Adc
Diode Capacitance Temperature Coefficient
(V
R
= 3.0 Vdc, f = 1.0 MHz)
TC
C
300
ppm/
°
C
C
t
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 50 MHz
C
R
, Capacitance Ratio
C
3
/C
25
f = 1.0 MHz (Note 2)
Device
Min
Nom
Max
Min
Min
Max
MMVL109T1
26
29
32
200
5.0
6.5
2. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 25 Vdc.
Figure 1. DIODE CAPACITANCE
40
32
24
16
8
01
3
10
30
100
V
R
, REVERSE VOLTAGE (VOLTS)
C
Figure 2. FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 3. LEAKAGE CURRENT
T
A
, AMBIENT TEMPERATURE
Figure 4. DIODE CAPACITANCE
T
A
, AMBIENT TEMPERATURE
Q
10
1000
100
10
100
1000
,
IR
100
60
60
0.01
0.006
0.001
0
+40
+100
C 1.04
0.97
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
C
t
C
c
+ C
j
36
28
20
12
4
f = 1.0 MHz
T
A
= 25
°
C
V
R
= 3 Vdc
T
A
= 25
°
C
V
R
= 20 Vdc
+120 +140
+80
+60
+20
40
20
0.1
0.06
1.0
0.6
10
6.0
20
2.0
0.2
0.02
0.002
50
0
+50
+100
1.03
1.01
0.99
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