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參數資料
| 型號： | MMVL2101T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | 硅調諧二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 130K |
| 代理商： | MMVL2101T1 |
LESHAN RADIO COMPANY, LTD.
MMVL2101T1–1/2
PLASTIC, CASE 477
SOD– 323
1
2
2
ANODE
1
CATHODE
MMVL2101T1
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE
These devices are designed in the popular Plastic Surface Mount
Package for high volume requirements of FM Radio and TV tuning and
AFC, general frequency control and tuning applications.They provide
solid–state reliability in replacement of mechanical tuning methods.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance – 10%
Complete Typical Design Curves
Device Marking: 4G
Silicon Tuning Diode
MAXIMUM RATINGS
Symbol
V
R
I
F
THERMAL CHARACTERISTICS
Symbol
P
D
Rating
Value
30
200
Unit
Vdc
mAdc
Continuous Reverse Voltage
Peak Forward Current
Characteristic
Max
200
Unit
mW
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
1.57
635
150
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse BreakdownVoltage
(I
R
= 10
μ
Adc)
Rev
erse Voltage Leakage Current
(V
R
= 25 Vdc, T
A
= 25°C)
Diode Capacitance Temperature Coefficient
(V
R
= 4.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
Min
30
Typ
—
Max
—
Unit
Vdc
I
R
—
—
0.1
μ
Adc
TC
C
—
280
—
ppm/°C
C
t
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
Min
6.1
Q, Figure of Merit
V
R
= 4.0 Vdc
f = 50 MHz
Min
2.5
TR, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Min
2.7
Device
MMVL2101T1
Nom
6.8
Max
7.5450
Max
3.2
ORDERING INFORMATION
Package
SOD–323
Device
MMVL2101T1
Shipping
3000 / Tape & Reel
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0
MHz using a capacitance bridge
(Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
T
measured at 2.0
Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C
readings of an admittance bridge at the
specified frequency and substituting in the
following equations:
Q =2
π
fC/G
(Boonton Electronics Model 33AS8 or
equivalent). Use Lead Length = 1/16”.
4. TC
C
, DIODE CAPACITANCE TEMPERATURE COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc,
f = 1.0 MHz, T
A
= –65°C with C
T
at V
R
= 4.0 Vdc, f =
1.0 MHz, T
A
= +85°C in the following equation, which
defines TC
C
:
TC
C
= C
T
(+85°C) – C
T
(–65°C)
85+65
Accuracy limited by measurement of C
T
to ±0.1 pF.
10
6
C
T
(25°C)
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相關代理商/技術參數 |
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| MMVL2101T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
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