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參數資料
型號: MN54ABT64
廠商: National Semiconductor Corporation
英文描述: MN54ABT646-X REV 0B0
中文描述: MN54ABT646 - X活0B0
文件頁數: 7/9頁
文件大?。?/td> 18K
代理商: MN54ABT64
MN54ABT646-X REV 0B0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
CL=50pF RL=500 OHMS TRISE/TFALL = 3.0nS
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
ts (H/L)
Setup Time HIGH
or LOW
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
7
BUS to
Clock
3.0
ns
9
7
BUS to
Clock
3.5
ns
10, 11
th (H/L)
Hold Time HIGH or
LOW
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
7
BUS to
Clock
1.0
ns
9
7
BUS to
Clock
1.0
ns
10, 11
tw (L)
Pulse Width
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
7
CPAB/CP
BA
4.0
ns
9, 10,
11
Fmax
Max Clock
Frequency
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
7
CPAB/CP
BA
125
MHz
9, 10,
11
Note 1:
Screen tested 100% on each device at -55C, +25C & +125C Temp., Subgroups 1,2,3,7 & 8.
Note 2:
Screen tested 100% on each device at -55C, +25C, and +125C temp., subgroups A9, A10,
and A11.
Screen tested 100% on each device at +25C temp. only, subgroup A9.
Sample tested (Method 5005, Table 1) on each mfg. lot at +25C, +125C, & -55C temp.
subgroups A1, 2, 3, 7 & 8.
Sample tested (Method 5005, Table 1) on each mfg. Lot at +25C, +125C & -55C temp.,
subgroups A9, 10 & 11.
Sample tested (Method 5005, Table 1) on each mfg. Lot at 25C temp only, subgroup A9.
Not tested (Guaranteed by Design Characterization Data).
Max number of outputs defines as (N). N-1 data inputs are driven 0V to 3V. one
output @Vol or @Voh.
Max number of data inputs (N) switching. (N-1) inputs switching 0V to 3V.
Input-under-test switching : 3V to threshold (Vild), 0V to threshold (Vihd), Freq= 1
MHZ
Note 10: Maximum test duration not to exceed one second, not more than one output shorted at
one time.
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
7
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