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參數(shù)資料
| 型號： | MNA-SERIES |
| 廠商： | MINI-CIRCUITS |
| 英文描述： | Monolithic Amplifiers High Directivity, 50з, 0.5 to 5.9 GHz |
| 中文描述： | 單片放大器高方向性，50з，0.5至5.9千兆赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 212K |
| 代理商： | MNA-SERIES |
INTERNET
http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers
NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 E
UROPE 44-1252-832600
Fax 44-1252-837010
Mini-Circuits
ISO 9001 & ISO 14001
Certified
Mini-Circuits
MNA-SERIES
REV. G
M92482
ED-9640A/2
MNA-SERIES
FL/TD/CP
041028
page 1 of 8
Monolithic Amplifiers
High Directivity, 50
,
0.5 to 5.9 GHz
Electrical Specifications at T
AMB
=25°C
Surface Mount
CASE STYLE:DQ849
Features
3V & 5V operation
micro-miniature size .120"x.120"
no external biasing circuit required
high directivity, 20 dB typ.
wide bandwidth, 0.5 to 5.9 GHz
low noise figure, 2.9 dB typ. (MNA-6)
output power, up to +19 dBm typ.
excellent repeatability
low cost
Applications
buffer amplifier
cellular
PCN
FREQ.
(GHz)
MODEL
NO.
f
L
- f
U
DC
OPERATING
CURRENT
@ Pin 3
(mA)
VSWR
*
(:1)
Typ.
DYNAMIC
RANGE
NF
(dB)
Typ.
at 1
GHz
GHz
5.4
26.5 28.0 1.5 1.6
5.4
23.2 24.2 1.5 1.6
4.9
19.6 21.3 1.9 1.5
4.8
18.0 19.9 1.9 1.5
4.8
28.4 29.0 1.5 1.7
4.8
23.9 24.9 1.5 1.7
3.5
19.4 21.0 1.6 1.9
3.5
18.0 20.0 1.6 1.9
2.9
27.1 28.0 1.5
2.9
23.4 25.0 1.5
MAXIMUM
POWER
(dBm)
Output
(1 dB Comp.)
Typ.
f
L
f
U
17.7 14.9
12.9 12.4
11.4
9.7
19.0 17.0
13.4 13.7
12.2
10.1
18.0
14.1
GAIN, dB Typical
DIRECTIVITY
(dB)
(Isolation-Gain)
THERMAL
RESIS-
TANCE
In Out
jc
Typ.
°C/W
Typ.
Typ. Max.
DC
VOLTS
(V)
Min.
at 2
GHz
10.3
—
13.0
—
14.0
—
17.0
—
21.5
—
IP3
(dBm)
Typ.
C
O
N
N
E
C
T
I
O
N
CASE
STYLE
Qty.
(30)
PRICE
$
1.0
0.5
over frequency, GHz
1.5
2.0
2.5
17.2
15.4
1.5
15.9
13.7
ov2.0
3.5
17.4
15.8
5.0
17.2
16.7
5.9
10.8
9.8
at 2
GHz
at 1
at 2
28.4 28.6 2.0 1.5
24.1 23.8 2.0 1.5
at 5.9
at 2
GHz
6.9
Maximum Ratings
Operating Temperature
Storage Temperature
DC Voltage
-40°C to 85°C
-55°C to 100°C
7V at pin 7
10V at pins 2&5
Power
Input Power (no damage)
500mW
10 dBm
Refer to pin configuration for DC
Pin Configuration
PORT
RF IN
RF OUT
DC
(nt)
2
5
7, with 1000 pF bypass to ground; connect pin 8
via 33 ohms to pin 7 externally
3,4 and paddle in center of bottom
1,6 No internal connection;
recommended use: per PCB Layout (see next sheet)
TB-186
GND EXT.
OPTIONAL
DEMO BOARD
MNA-2
0.5-2.5
5.0
2.8
5.0
2.8
5.0
2.8
5.0
2.8
5.0
2.8
10.6
9.6
14.6
14.2
15.6
14.3
18.5
18.0
19.4
18.6
12.8
11.5
16.2
15.2
16.6
14.6
22.8
21.4
23.5
21.5
12.8
11.2
16.1
15.0
16.4
14.5
21.9
20.5
23.6
21.2
12.3
10.7
15.0
14.0
15.8
14.1
20.6
19.4
23.0
21.0
11.9
10.2
11.8
11.0
13.3
11.7
18.0
17.4
20.2
19.0
20
20
17
17
20
20
17
17
17
17
76
60
30
28
75
67
28
26
81
65
95
—
40
—
90
—
40
—
95
—
78
DQ849 nt
1.90
MNA-3
0.5-2.5
9.5
8.0
78
DQ849 nt
1.60
MNA-4
0.5-2.5
78
DQ849 nt
1.90
MNA-5
0.5-2.5
8.0
6.5
15.8
13.2
78
DQ849 nt
1.60
MNA-6
0.5-2.5
1.6
1.9
78
DQ849 nt
2.25
MNA-7
1.5-5.9
5.0
2.8
15.0
—
15.6 15.9
12.7 13.1
20
24
73
65
96
—
78
DQ849 nt
2.25
MTTF vs. Junction Temp. (MNA)
100
1,000
10,000
100,000
1,000,000
10,000,000
60
70
80
90
100
110
120
130
140
150
Junction Temperature (
C)
M
K1-MNA
K2-MNA
40
60
10 of each: MNA-2, -3, -5, -6
10 of each: MNA-2, -3, -4, -5, -6, -7
69.95
99.95
KIT
No.
No. of
Units in KIT
Description
designers kit available
Price $
per KIT
* VSWR above .75 GHz
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