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參數資料
| 型號： | MNDS26F32MJRQMLV |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
| 中文描述： | 四路差分線路接收器也可保證10萬RAD數據通信（四）測試，以符合MIL - STD - 883，方法1019.5，條件A |
| 文件頁數： | 6/12頁 |
| 文件大?。?/td> | 313K |
| 代理商： | MNDS26F32MJRQMLV |
MNDS26F32M-X-RH REV 0C0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS - DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
NOTE::This section applies to -QMLV devices only and shall be read & recorded at TA = +25C before and
after each burn-in and shall not change by more than the limits indicated. The delta rejects shall be
included in the PDA calculation.
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Voh
Logical "1"
Output Voltage
Vcc = 4.5V, Ioh = -440uA,
Delta Vin = 1V, Ven = 0.8V = Ven
-250
250
mV
1
Vol
Logical "0"
Output Voltage
Vcc = 4.5V, Iol = 4mA,
Delta Vin = -1V, Ven = 0.8V = Ven
-45
45
mV
1
Vcc = 4.5V, Iol = 8mA,
Delta Vin = -1V, Ven = 0.8V = Ven
-45
45
mV
1
Iin
Input Current
Vcc = 4.5V, Vin=15V (Pin under test),
other inputs -15V <= Vin <= +15V
-0.28
0.28
mA
1
Vcc = 5.5V, Vin=-15V (Pin under test),
other inputs -15V <= Vin <= +15V
-0.28
0.28
mA
1
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Power dissipation must be externally controlled at elevated temperatures.
Parameter tested go-no-go only.
Tested at 50pF guarantees limit at 15 & 5pF.
Tested at 50pF, system capacitance exceeds 5 to 15pF.
Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics. These parts may be dose rate sensitive in a space
environment and demonstrate enhanced low dose rate effect. Radiaton end point limits
for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, Method 1019.5, Condition A.
6
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| MNDS7820A | MNDS7820A-X REV 0A0 |
| MNLM129A-X | PRECISION REFERENCE |
| MNLM136A | 2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
| MNLM136A-2.5-X | 2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
| MNLM136A-2.5-X-RH | 2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MNDS26F32MW/883 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
| MNDS26F32MWG/883 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
| MNDS26F32MWGRQMLV | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
| MNDS26F32MW-QMLV | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
| MNDS26F32MWR-QML | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
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