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參數資料
| 型號： | MP4305 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅外延式進步黨（達林頓功率晶體管在1 4） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 145K |
| 代理商： | MP4305 |
MP4305
2002-11-20
1
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4305
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Small package by full molding (SIP 12 pin)
High collector power dissipation (4 devices operation)
: P
T
= 4.4 W (Ta = 25°C)
High collector current: I
C (DC)
=
5 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
=
5 V, I
C
=
3 A)
Diode included for absorbing fly-back voltage.
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
100
V
Collector-emitter voltage
100
V
Emitter-base voltage
6
V
DC
5
Collector current
Pulse
8
A
Continuous base current
0.5
A
Collector power dissipation
(1 device operation)
P
C
2.2
W
Collector power dissipation
(4 devices operation)
P
T
4.4
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-32C1E
Weight: 3.9 g (typ.)
2
4
9
R1
≈
4.5 k
R2
≈
300
1
5
8
R1 R2
12
11
6
7
3
10
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