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參數(shù)資料
| 型號(hào)： | MP4513 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅npn型三重?cái)U(kuò)散型（達(dá)林頓功率晶體管在1 4） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 140K |
| 代理商： | MP4513 |
MP4513
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
MP4513
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Package with heat sink isolated to lead (SIP 12 pin)
High collector power dissipation (4 devices operation)
: P
T
= 5 W (Ta = 25°C)
High collector current: I
C (DC)
= 5 A (max)
High DC current gain: h
FE
= 1000 (min) (V
CE
= 3 V, I
C
= 3 A)
Diode included for absorbing fly-back voltage.
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
100
V
Collector-emitter voltage
100
V
Emitter-base voltage
5
V
DC
5
Collector current
Pulse
8
A
Continuous base current
0.1
A
Collector power dissipation
(1 device operation, Ta = 25°C)
P
C
3.0
W
Ta = 25°C
5.0
Collector power
dissipation
(4 devices operation)
Tc = 25°C
P
T
25
W
Isolation voltage
V
Isol
1000
V
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-32B1A
Weight: 6.0 g (typ.)
1
R1 R2
7
R1
≈
5 k
R2
≈
150
6
12
8
5
2
3
10
4
9
11
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