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參數資料
| 型號： | MP4T324335 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Bipolar High fT Low Voltage NPN Silicon Transistors |
| 中文描述： | 雙極低壓高fT的NPN硅晶體管 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 89K |
| 代理商： | MP4T324335 |
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Bipolar High fT Low Voltage
NPN Silicon Transistors
MP4T3243 Series
V4.00
Features
Designed for 3-5 Volt Operation
Useable to 6 GHz in Oscillators
Useable for Low Noise, Low Voltage Driver Amplifiers
Through 3 GHz
Useful for Class C Amplifiers
Available as Chips and in Hermetic and Surface
Mount Packages
Can be Screened to JANTX, JANTXV Equivalent Levels
(ceramic pacakges)
Tape and Reel Packaging Available for packaged
devices.
Description
The MP4T3243 series of high f
T
low voltage NPN medium
power silicon bipolar transistors is designed for usage in
battery operated systems with 3-5 volt collector bias. They
are useful as low phase noise oscillator transistors through 6
GHz and as moderate power driver amplifiers through 3
GHz.
These transistors are available as chips for hybrid oscillators
or in ceramic packages for military or commercial usage.
Both the chips and hermetic packages can be screened to
JANTX equivalent levels.
These transistors use high temperature gold, platinum,
titanium metalization with silicon dioxide and silicon nitride
passivation. The chip is emitter ballasted with polysilicon
resistors to prevent current concentration at high current
operation.
Case Style
SOT-23
Chip
Micro-X
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| MP4T631039 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, Low Noise High fT Silicon Transistor |
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