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參數資料
| 型號： | MP4TD0435 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 54K |
| 代理商： | MP4TD0435 |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0435, MP4TD0436
Features
Cascadable 50
Ω
Gain Block
3dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's
MP4TD0435
performance silicon bipolar MMICs housed in cost effective
ceramic microstrip packages. The MP4TD0435 and
MP4TD0436 are designed for use where a general purpose
50
Ω
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial and
military applications.
The MP4TD0435 and MP4TD0436 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
TYPICAL POWER GAIN vs FREQUENCY
10
and
MP4TD0436
are
high
0
1
2
3
4
5
6
7
8
9
0.1
1
10
FREQUENCY (GHz)
G
Gain Flat to DC
Id = 50 mA
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MA4TD0436.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.057
1,45
.083
2,11
.100
2,54
.085
2,16
.455 ±.030
11,54 ±0,76
±0.010
0.180
4,57
.006 ±.002
0,15 ±0,05
.022
0,56
.020
0,508
±0,25
MA4TD0436
MA4TD0435
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25
°
C, Id = 50 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S21
2)
Δ
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 2.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
7.5
-
-
-
-
-
-
-
-
4.75
-
Typ.
9.0
+ 0.5
3.0
1.5
1.6
12.5
6.2
25.5
125
5.25
-8.0
Max.
9.5
+ 1.0
-
-
-
-
-
-
-
5.75
-
-
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
相關PDF資料 |
PDF描述 |
|---|---|
| MP4TD0435T | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0436 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0436T | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0470 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0470T | Silicon Bipolar MMIC Cascadable Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MP4TD0435T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0436 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0436T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0470 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0470T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
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