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參數資料
| 型號： | MP4TD1100G |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯放大器 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MP4TD1100G |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1100
Features
High Dynamic Range Cascadable
50
/75
Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.5 dBm Typical P
1dB
@ 0.7 Ghz
11 dB Typical Gain @ 0.5 GHz
3.5 dB Typical Noise Figure @ 1.0 GHz
Description
M-Pulse's MP4TD1100 is a high performance silicon
bipolar MMIC chip. The MP4TD1100 is designed for
use in 50
or 75
systems where a high dynamic range
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD1100 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
0
2
4
6
8
10
12
0.1
1
10
FREQUENCY (GHz)
G
Id=60mA
Electrical Specifications @ T
A
= +25
°
C, Id = 60 mA, Z0 = 50
Symbol
Parameters
Gp
Power Gain (
S21
2)
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Chip Outline Drawing1,2,3,4
RF Input
Feedback Capacitor
Ground
Optional RF Output & +5.5 Volts
375
(14.8 mil)
μ
375
(14.8 mil)
μ
Notes:
(unless otherwise specified)
1. Chip Thickness is 120
μ
m; 4.8 mils
2. Bond Pads are 40
μ
m; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
μ
m .xx =
±
.13; mil .x =
±
.5
Ordering Information
Model No.
MP4TD1100G
MP4TD1100W
Type of Carrier
GEL PACK
Waffle Pack
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.7 GHz
ref 50 MHz Gain
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
f = 0.7 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
-
-
-
-
-
-
-
-
-
4.5
-
Typ.
12.5
+ 1.2
1.0
1.9
1.9
17.5
4.5
30.0
160
5.5
-8.0
Max.
-
-
-
-
-
-
-
-
-
6.5
-
-
-
相關PDF資料 |
PDF描述 |
|---|---|
| MP4TD1100W | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1110 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1135 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1135T | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1136 | Silicon Bipolar MMIC Cascadable Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MP4TD1100W | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1110 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1120 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1135 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD1135T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
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