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參數資料
| 型號： | MP4TD1170T |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 52K |
| 代理商： | MP4TD1170T |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1170
Features
High Dynamic Range Cascadable 50
Ω
/75
Ω
Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.0 dBm Typical P
1dB
@ 1.0 GHz
12 dB Typical Gain @ 0.5 GHz
4.0 dB Typical Noise Figure @ 1.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD1170 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD1170 is designed for use in 50
Ω
or 75
Ω
systems where a high dynamic range and low
distortion gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD1170 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
0
2
4
6
8
10
12
0.1
1
10
FREQUENCY (GHz)
G
Id=60mA
Gold-Ceramic Microstrip Package Outline
1,2
.040
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 ±.030
12,57±0,76
.004 ±.002
0,1±0,05
.035
0,89
.070
1,78
.020
0,51
1,02
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Ordering Information
Model No.
MP4TD1170
MP4TD1170T
Package
Hermetic Ceramic
Tape and Reel
Electrical Specifications @ T
A
= +25
°
C, Id = 60 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S
21
2
)
Δ
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1 dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.7 GHz
ref 50 MHz Gain
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
f = 0.7 GHz
f = 0.7 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
11.5
-
-
-
-
16.0
-
-
-
4.5
-
Typ.
12.5
±
0.9
1.0
1.8
1.9
17.0
4.0
30.0
160
5.5
-8.0
Max.
13.5
±
1.1
-
-
-
-
4.5
-
-
6.5
-
-
-
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