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參數資料
| 型號： | MPF102 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel RF Amplifier |
| 中文描述： | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 270K |
| 代理商： | MPF102 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
VDG
VGS
IG
PD
25
Vdc
Drain–Gate Voltage
25
Vdc
Gate–Source Voltage
–25
Vdc
Gate Current
10
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
350
2.8
mW
mW/
°
C
Junction Temperature Range
TJ
Tstg
125
°
C
Storage Temperature Range
–65 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10
μ
Adc, VDS = 0)
V(BR)GSS
–25
—
Vdc
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100
°
C)
IGSS
—
—
–2.0
–2.0
nAdc
μ
Adc
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc)
VGS(off)
—
–8.0
Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
VGS
–0.5
–7.5
Vdc
IDSS
2.0
20
mAdc
yfs
2000
1600
7500
—
mhos
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Re(yis)
—
800
mhos
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Re(yos)
—
200
mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
7.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
3.0
pF
1. Pulse Test; Pulse Width
630 ms, Duty Cycle
10%.
Order this document
by MPF102/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
1
23
1 DRAIN
2 SOURCE
3
GATE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPF102_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier |
| MPF102_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET VHF Amplifier |
| MPF102_D27Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MPF102_D74Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MPF102_D74Z_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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