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參數(shù)資料
| 型號(hào)： | MPS2907A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistors PNP Silicon(通用晶體管（PNP）) |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 119K |
| 代理商： | MPS2907A |
Semiconductor Components Industries, LLC, 2004
December, 2004 Rev. 2
1
Publication Order Number:
MPS2907A/D
MPS2907A
Preferred Device
General Purpose
Transistors
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
60
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance,
JunctiontoCase
R
JC
83.3
°
C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO92
CASE 29
STYLE 1
3
2
1
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
2
BASE
1
EMITTER
MPS2
907A
A
Y
WW
= Device Code
= Specific Device Code
Assembly Location
= Year
= Work Week
MARKING DIAGRAM
MPS2
907A
AYWW
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPS3704 | NPN (GENERAL PURPOSE TRANSISTOR) |
| MPS3705 | NPN (GENERAL PURPOSE TRANSISTOR) |
| MPS3706 | NPN (GENERAL PURPOSE TRANSISTOR) |
| MPS5179 | High Frequency Transistor NPN Silicon(NPN型高頻晶體管) |
| MPS6513 | NPN (AMPLIFIER TRANSISTOR) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS2907A\E6 | 功能描述:兩極晶體管 - BJT REORD 511-PN2907A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907A_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MPS2907AG | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MPS2907A-H | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
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