- 您現在的位置：買賣IC網 > PDF目錄371136 > MPS4250 (ON SEMICONDUCTOR) Transistor(PNP Silicon) PDF資料下載
參數資料
| 型號： | MPS4250 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Transistor(PNP Silicon) |
| 中文描述： | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 69K |
| 代理商： | MPS4250 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VCBO
VEBO
IC
PD
–40
Vdc
Collector–Emitter Voltage
–40
Vdc
Collector–Base Voltage
–40
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
—
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –5.0 mA)
Collector–Emitter Sustaining Voltage(1)
(IC = –5.0)
V(BR)CES
–40
—
Vdc
V(BR)CEO(sus)
–40
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 A)
V(BR)CBO
–40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 A)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –50 V)
(VCB = –40 V, TA = 65
°
C)
ICBO
—
—
–10
–3.0
nA
A
Emitter Cutoff Current
(VEB = –3.0 V)
IEBO
—
–20
nA
1. Pulse Test: Pulse Width = 300 s; Duty Cycle = 2.0%.
Order this document
by MPS4250/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
相關PDF資料 |
PDF描述 |
|---|---|
| MPS6428 | Amplifier Transistor |
| MPS6428 | Amplifier Transistor(NPN Silicon) |
| MPS650 | Amplifier Transistors |
| MPS650 | Mini size of Discrete semiconductor elements |
| MPS651 | Mini size of Discrete semiconductor elements |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS4250_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP Silicon Transistor |
| MPS4250A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PNP (AMPLIFIER TRANSISTOR) |
| MPS4250ARLRM | 功能描述:兩極晶體管 - BJT 60V Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS4250ARLRMG | 功能描述:兩極晶體管 - BJT 60V Small Signal PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS4250G | 功能描述:兩極晶體管 - BJT 40V Small Signal PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。