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參數資料
| 型號： | MPS4250RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數： | 1/33頁 |
| 文件大小： | 293K |
| 代理商： | MPS4250RLRA |
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2–576
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–40
Vdc
Collector – Emitter Voltage
VCES
–40
Vdc
Collector – Base Voltage
VCBO
–40
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
—
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –5.0 mA)
V(BR)CES
–40
—
Vdc
Collector – Emitter Sustaining Voltage(1)
(IC = –5.0)
V(BR)CEO(sus)
–40
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mA)
V(BR)CBO
–40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mA)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –50 V)
(VCB = –40 V, TA = 65°C)
ICBO
—
–10
–3.0
nA
mA
Emitter Cutoff Current
(VEB = –3.0 V)
IEBO
—
–20
nA
1. Pulse Test: Pulse Width = 300
ms; Duty Cycle = 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS4250
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS430P112 WAF | 制造商:Texas Instruments 功能描述: |
| MPS430P112IDW | 制造商:Texas Instruments 功能描述: |
| MPS4354 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 |
| MPS4355 | 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR PNP 80V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, PNP, 80V, 800mA, TO 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, PNP, 80V, 800mA, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:625mW; DC Collector Current:800mA; DC Current Gain hFE:50; Operating Temperature Min:-55C ;RoHS Compliant: Yes |
| MPS4356 | 制造商:NTE Electronics 功能描述:T-PNP SI- AUDIO AMP |
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