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參數資料
| 型號： | MPS650 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 173K |
| 代理商： | MPS650 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
MAXIMUM RATINGS
Rating
Symbol
MPS650
MPS750
MPS651
MPS751
Unit
Collector–Emitter Voltage
VCE
VCB
VEB
IC
PD
40
60
Vdc
Collector–Base Voltage
60
80
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
2.0
Adc
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watt
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS650, MPS750
MPS651, MPS751
V(BR)CEO
40
60
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100
μ
Adc, IE = 0 )
MPS650, MPS750
MPS651, MPS751
V(BR)CBO
60
80
—
—
Vdc
Emitter–Base Breakdown Voltage
(IC = 0, IE = 10
μ
Adc)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPS650, MPS750
MPS651, MPS751
ICBO
—
—
0.1
0.1
μ
Adc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
—
0.1
μ
Adc
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle = 2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS650/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Devices
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
Voltage and current are
negative for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
相關PDF資料 |
PDF描述 |
|---|---|
| MPS651 | Amplifier Transistors |
| MPS750 | Amplifier Transistors |
| MPS651 | EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) |
| MPS6521 | Amplifier Transistors |
| MPS6521 | NPN (AMPLIFIER TRANSISTOR) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS650_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
| MPS6507 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 20V 0.05A 3-Pin TO-226 |
| MPS650G | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS650G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor Transistor Polarity:S |
| MPS650RLRA | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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