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參數資料
| 型號： | MPS650RLRAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 111K |
| 代理商： | MPS650RLRAG |
Semiconductor Components Industries, LLC, 2005
May, 2005
Rev. 2
1
Publication Order Number:
MPS650/D
MPS650, MPS651, NPN
MPS750, MPS751, PNP
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
Pb
Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
MPS650
MPS750
MPS651
MPS751
Unit
Collector
Emitter Voltage
V
CE
40
60
Vdc
Collector
Base Voltage
V
CB
60
80
Vdc
Emitter
Base Voltage
V
EB
5.0
Vdc
Collector Current
Continuous
I
C
2.0
Adc
Total Power Dissipation @
T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Power Dissipation @
T
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction
to
Ambient
R
JA
200
°
C/W
Thermal Resistance,
Junction
to
Case
R
JC
83.3
°
C/W
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO
92
CASE 29
11
MARKING
DIAGRAM
xxx
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
PNP
NPN
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
MPS
xxx
AYWW
Preferred
devices are recommended choices for future use
and best overall value.
相關PDF資料 |
PDF描述 |
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| MPS650ZL1 | Amplifier Transistors |
| MPS650ZL1G | Amplifier Transistors |
| MPS651G | Amplifier Transistors |
| MPS651RLRA | Amplifier Transistors |
| MPS651RLRAG | Amplifier Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS650ZL1 | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS650ZL1G | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651 | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651_Q | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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